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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 57 (1993), S. 385-391 
    ISSN: 1432-0630
    Keywords: 61.14 ; 68.48 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Incoherent Z-contrast imaging uses a high-angle annular detector to collect only highly local, incoherently generated scattering with the result that images become dependent on intensities, not phases. No model structures are required for a first-order structure determination, and the images remain intuitively interpretable even at interfaces. Under suitable conditions, incoherently generated inelastic scattering may be collected simultaneously with a large-aperture axial spectrometer, and, by using the Z-contrast image to locate the scanning transmission electron microscope (STEM) probe over selected atomic columns, can provide an atomic-resolution chemical analysis. This is demonstrated with reference to an epitaxial CoSi2/Si(100) interface, achieving a 2.7 Å spatial resolution. Recent insights into the growth and relaxation of strained Si-Ge epitaxial films are described, highlighting the role of stress concentrations, and contrasting the case of a free surface with that of a surface constrained by an oxide layer.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 366 (1993), S. 143-146 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The basis of obtaining electron energy-loss spectra (EELS) with atomic resolution is the high-resolution Z-contrast imaging technique in the scanning transmission electron microscope (STEM) (Fig. 1). Using the high-angle annular dark-field detector makes thermal diffuse scattering the dominant ...
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1837-1839 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Here we describe the results of an atomic resolution study of the structure and composition of both the interior of the grains, and the grain boundaries in polycrystalline MgB2. We find that there is no oxygen within the bulk of the grains but significant oxygen enrichment at the grain boundaries. The majority of grain boundaries contain BOx phases smaller than the coherence length, while others contain larger areas of MgO sandwiched between BOx layers. Such results naturally explain the differences in connectivity between the grains observed by other techniques. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2638-2640 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental atomic resolution analysis of an undoped Σ5 36° [001] tilt grain boundary in SrTiO3 shows that the structure contains incomplete oxygen octahedra. These incomplete octahedra act as effective oxygen vacancies and lead to a fixed, positive boundary charge. Annealing the boundary in the presence of MnO2 does not change the atomic structure of the boundary plane, and results in a high concentration of Mn3+ (acceptor) enrichment at the specific Ti4+ locations in closest proximity to the effective oxygen vacancies. This result can be explained in terms of standard charge compensation models and indicates that the formation of electrical barriers at oxide grain boundaries may be influenced by the atomic structure of the boundary plane. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2346-2348 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the growth of large-area, domain-free CdTe(111)B single crystals on As-passivated Si(111) substrates by molecular beam epitaxy using ZnTe buffer layers. The crystal quality of the CdTe(111)B/ZnTe(111)B/Si(111) films was examined by x-ray diffraction (56 arcs), etch-pit-density (2×105 cm−2) analysis, and transmission electron microscopy, and was found to be comparable to or better than the best CdTe(111)B films grown directly on vicinal Si(001). Surface reconstructions were observed by reflection high-energy electron diffraction at different stages. Diffraction intensity oscillations demonstrated the layer-by-layer growth mode of the CdTe surface. An interface model for these films is proposed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [s.l.] : Macmillian Magazines Ltd.
    Nature 435 (2005), S. 475-478 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Large-scale applications of high-transition-temperature (high-T c) superconductors, such as their use in superconducting cables, are impeded by the fact that polycrystalline materials (the only practical option) support significantly lower current densities than single ...
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  • 7
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 444 (2006), S. 235-235 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Nature 366, 143–146 (1993) In this Letter, we reported that it was possible to undertake chemical analysis with atomic resolution in a scanning transmission electron microscope—a capability that has subsequently been demonstrated ...
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4292-4299 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive view of the microstructure of (111)B CdTe films grown on miscut (001)Si substrates by molecular beam epitaxy has been obtained by transmission electron microscopy and scanning transmission electron microscopy. It is found that in the initial growth stage, CdTe nucleates with a dominance of one particular domain: a domain with (111)B polarity and orientation of [11−2]CdTe//[1−10]Si, although there are also some other domains of different polarity and orientation. The dominance of one type domain is due to the reduction of the surface symmetry by using the miscut substrate and by using optimum growth conditions. As the growth proceeds, a single-crystal film is produced by the dominating domain overgrowing the minority domains nucleated at the film–substrate interface. This results in the final film of single-crystal character having (111)B polarity with [11−2]CdTe along [1−10]Si. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 115-119 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nucleation and growth of Hg1−xCdxTe on CdTe(211)B/Si(211) substrates by molecular beam epitaxy are comprehensively studied by in situ reflection high energy electron diffraction and transmission electron microscopy. Microtwins are observed to be formed at the interface, but are overgrown later as the growth proceeds. It is shown that the three-dimensional growth at the nucleation stage of HgCdTe on CdTe(211)B/Si and CdZnTe(211)B is more likely due to the higher surface energy of Hg1−xCdxTe than that of CdTe(211)B and CdZnTe(211)B. © 2000 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 6 (1999), S. 326-328 
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
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