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  • 1
    Online Resource
    Online Resource
    München : Carl Hanser Verlag GmbH & Co. KG
    Keywords: Spritzgießen
    Abstract: Improvement of injection molding processes remains a topic of great interest in both industry and research institutions. This book introduces the analysis of the molding process from a systems technology point of view. It is divided into four parts: the first part provides general background to introduce the injection molding process, the second covers the control of the process, the third is on the monitoring technology, and the fourth is concerned with the optimization of the process. Most the results within are from real engineering implementations and experimental tests.
    Abstract: Dr. Furong Gao received his B.Eng. degree in Automation from the East China Institute of Petroleum in 1985 and M.Eng. and Ph.D. degrees in Chemical Engineering from McGill University, Canada, in 1989 and 1993, respectively. Currently, he is a Chair Professor of Chemical and Biomolecular Engineering at the Hong Kong University of Science and Technology (HKUST), and a “State Thousand Talents (B)” Professor at the Department of Control Science and Engineering, Zhejaing University, China. Concurrent to his professorial appointment, he serves HKUST also as the Associate Dean of Fok Ying Tung Graduate School, and the Director of the Division of Advanced Manufacturing and Automation. Professional Affiliations: Fellow, Society of Plastics Engineers Consultant, Hong Kong Plastics Machinery Association Funding Director, Society of Advanced Molding Technology Member, International Federation of Automatic Control (IFAC) Technical Committee Associate Editor, Journal of Process Control Editorial Advisor, Industrial & Engineering Chemistry Research Engineering Subject Editor, Arabian Journal of Engineering and Science Editorial Member, China Plastics Editorial Member, Control & Decision
    Type of Medium: Online Resource
    Pages: 413 S.
    ISBN: 9781569905937
    Parallel Title: Printed edition:
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 150-151 (Jan. 1994), p. 307-314 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 22-24 (Jan. 1987), p. 591-600 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 83-87 (Jan. 1992), p. 587-592 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 359-360 (Nov. 2007), p. 254-258 
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Right getting hold of the contact form between the wafer and the pad is the precondition offully understanding the material removal mechanism in wafer chemical mechanical polishing (CMP)process. In this paper, according to friction and abrasion theory, the differentiating method of contactform between the wafer and the pad has been obtained firstly. Then, the material removal rate (MRR)produced by mechanical action, chemical action and their interaction has been achieved by test resultsof MRR. According to analysis on test results of MRR, it is concluded that the mechanical actionproduced by abrasives is the main mechanical action, the MRR produced by the interaction betweenthe mechanical action of abrasives and chemical action of slurry is the main MRR and the contactform between the wafer and the pad is solid-solid contact in wafer CMP. These results will providetheoretical guide to further understand the material removal mechanism of in wafer CMP
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 53-54 (July 2008), p. 119-124 
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Chemical mechanical polishing (CMP) has already become a mainstream technology inglobal planarization of wafer. The nonuniformity of material removal on wafer surface has a maininfluence on surface profile of silicon wafer in CMP process. However, the formation mechanism ofnonuniformity in wafer CMP has not been fully understood and the influences of CMP processvariables on nonuniformity are not fully clear. The nonuniformity of material removal on wafersurface has not been fully understood and the influences of CMP process variables on nonuniformityare not fully clear in CMP process. In this paper, firstly, the equation of particle movement trajectorieson wafer surface was built by the movement relationship between the wafer and the polishing pad ona single head CMP machine with line oscillation of carrier. Then the distribution of abrasivetrajectories on wafer surface was analyzed at different rotational speed. By the analysis, therelationship between the movement variables of the CMP machine and the With-In-WaferNonuniformity (WIWNU) of material removal on wafer surface had been derived. Last, the WIWNUtests were conducted on CP-4 machine. The analysis results are in accord with experimental results.The results will provide some theoretical guide for designing the CMP equipment, selecting themovement variables in CMP and further understanding the material removal mechanism in waferCMP
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Biotechnology letters 21 (1999), S. 1131-1135 
    ISSN: 1573-6776
    Keywords: cloning ; E. coli ; expression ; α 1,3-galactosyltransferase ; UDP-galactose 4-epimerase
    Source: Springer Online Journal Archives 1860-2000
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract The gene galE encoding UDP-galactose 4-epimerase was cloned into E. coli BL21(DE3) from the chromosomal DNA of E. coli strain K-12. High expression of the soluble recombinant epimerase was achieved in the cell lysate. In order to evaluate the use of this epimerase in enzymatic synthesis of important α-Gal epitopes (oligosaccharides with a terminal Galα1,3Gal sequence), a new radioactivity assay (α1,3-galactosyltransferase coupled assay) was established to characterize its activity in producing UDP-galactose from UDP-glucose. Approximately 2700 units (100 mg) enzyme with a specific activity of 27 U mg−1 protein could be obtained from one liter of bacterial culture. The epimerase was active in a wide pH range with an optimum at pH 7.0. This expression system established a viable route to the enzymatic production of α-Gal oligosaccharides to support xenotransplantation research.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    ISSN: 1572-9559
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Based on the electron movement principles the beam paraxial trajectory and space trajectory equation in drifting space filled with plasma are given in this paper. The space is divided into two areas(α and β, β contains β1 and β2), the behavior of electrons in these areas is studied. The equations are theoretically or numerically solved, the focussing and transmission properties are studied and some parameters affecting these properties are discussed in detail. The relativistic effect is also taken into account. The study shows that with plasma filled the beam can be focused efficiently and transmitted with high quality by optimally choosing the plasma filling fraction and the voltage. Plasma microwave electronics stemmed from 1949, however, it developed rapidly in recent years. In the process of high power microwave study, plasma is more and more introduced into microwave source. Because of the neutralization effect of plasma, the beam can transmit with high quality, even under weak or without magnetic field, it can propagate through drifting tube or slow wave structure by its self magnetic focusing force[1–2]. By making full use of this property, microwave devices without magnetic field system can be made, this leads to a decrease in volume and weight of the device. Some experiments show that this kind of device can promote the output power and efficiency obviously. However, because of the presence of plasma, the beam's behavior changes greatly compared to those under vacuum condition. It is important to study the properties of the beam in drifting space or slow wave structure filled with plasma for the development of the device.
    Type of Medium: Electronic Resource
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  • 9
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    Bonn: Institute for the Study of Labor (IZA)
    Publication Date: 2016-08-27
    Description: We estimate the impact of receiving pension benefits on mental well-being using China's New Rural Pension Scheme launched in 2010, the largest pension program in the world. More than four hundred million Chinese have enrolled in the program, and the program on average amounts to one fifth of pensioners' earned income. We find a salient increase in pension benefits and poverty alleviation around the pension eligibility age cut-off. Employing an instrumental variable approach to a national sample of the China Family Panel Studies, our empirical strategy overcomes the endogeneity of pension receipt that prevents us from identifying the causal effect of income change on mental health as measured by the full version of CES-D and depressive symptoms. Results reveal a sizeable reduction in depression susceptibility due to pension income. The improvement in mental health is larger for vulnerable populations with financial and health constraints. We further discuss potential pathways through which pension may affect mental health.
    Keywords: H55 ; I18 ; I38 ; J14 ; ddc:330 ; pension income ; depression ; mental health ; older populations
    Language: English
    Type: doc-type:workingPaper
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  • 10
    facet.materialart.
    Unknown
    Bonn: Institute for the Study of Labor (IZA)
    Publication Date: 2016-08-27
    Description: This paper estimates the monetary value of cutting PM2.5, a dominant source of air pollution in China. By matching hedonic happiness in a nationally representative survey with daily air quality data according to exact dates and locations of interviews in China, we are able to estimate the relationship between local concentration of particulate matter and individual happiness. By holding happiness constant, we calculate the tradeoff between the reduction in particulate matter and income, essentially a happiness-based measure of willingness-to-pay for mitigating air pollution. We find that people on average are willing to pay ¥539 ($88, or 3.8% of annual household per capita income) for a 1 μg/m3 reduction in PM2.5 per year per person.
    Keywords: Q51 ; Q53 ; I31 ; ddc:330 ; willingness to pay ; hedonic happiness ; air pollution ; China
    Language: English
    Type: doc-type:workingPaper
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