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  • 1
    Book
    Book
    New Jersey [u.a.] : World Scientific Publishing
    Person(s): Li, Ming-Fu
    Keywords: Halbleiter ; Quantenphysik ; Halbleiter ; Quantenphysik
    Type of Medium: Book
    Pages: XIII, 570 S. , graph. Darst.
    Edition: Repr.
    ISBN: 9810215991
    Series Statement: International series on advances in solid state electronics and technology
    RVK:
    Language: Undetermined
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 10-12 (Jan. 1986), p. 469-474 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 83-87 (Jan. 1992), p. 853-858 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 196-201 (Nov. 1995), p. 279-284 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2599-2602 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hydrostatic pressure coefficient of Au acceptor levels ET in Si was measured by transient capacitance method. Under the pressure range of 0–8 kbar, the pressure coefficient ∂(Ec−ET)/∂P=−1.9 meV/kbar. The electron capture cross section of Au acceptor centers is independent of pressure within experimental accuracy. For defect levels with defect potential of Td symmetry, the uniaxial stress coefficient ∂(E¯c−E¯T)/∂F is isotropic and equal to one-third of corresponding hydrostatic pressure coefficient. By comparing the present result of hydrostatic pressure coefficient with the uniaxial stress coefficient reported by X. C. Yau, G. G. Qin, S. R. Zeng, and M. H. Yuan [Acta Phys. Sin. 33, 377 (1984)], one concludes that the defect potential is far from Td symmetry. Therefore, the Au acceptor levels are unlikely to have been originated by simple gold substitutional or interstitial configuration in Si.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5302-5306 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism for quasi-breakdown (QB) in thin gate oxides was studied using bipolar current stress and unipolar constant current stress. Continual bipolar current stressing on the gate oxide shows two distinct stages of QB—recoverable and unrecoverable QB. During the recoverable QB stage, the gate leakage current recovers to the stress-induced leakage current level upon application of a proper reverse bias. In contrast, no electrical recovery is observed within the unrecoverable QB stage. This stage is characterized by a higher gate leakage current than that of the recoverable QB stage and a very stable gate voltage during stressing. Carrier separation measurements further demonstrate that two different modes of conduction can occur during the recoverable QB stage. In the early stage, Fowler–Nordheim electron tunneling dominates the conduction mechanism although a small hole current is observed. With prolonged electrical stress, the hole direct tunneling current becomes dominant. Based on the aforementioned observations and the monitoring of the generation of oxide traps using the direct-current current–voltage technique, a QB model of positive hole trapping at the anode is proposed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 379-381 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Our experiment shows that when the gate oxide thickness is scaled to direct tunneling regime, the gate leakage current, and the number of interface traps increase in a discrete manner rather than in a gradual increment. A direct correlation between the increments of the gate leakage current and interface traps, irrespective of stressing polarity, is also observed. The discrete increase in gate current is due to degradation at localized spots rather than a uniform degradation over the entire gate area. The increment is also observed over a wide voltage range unlike interface-trap-assisted tunneling previously reported which occurs mainly near the flat-band voltage. A possible mechanism is proposed based on the observations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1645-1645 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy has been performed on the DX center in the Ga0.65Al0.35As:Te as a function of pressure. The lattice relaxation we observed showed that the results of Talwar et al. (small lattice relaxation) are inconsistent and inconclusive. Our results significantly weaken their evidence in favor of small lattice relaxation. (AIP)
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1197-1199 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently the effect of uniaxial stress on the deep level transient spectroscopy (DLTS) of the DX center in AlGaAs alloys have been reported by two separate groups. In both experiments no splitting of the DLTS peak was observed. We have analyzed the experimental results in terms of a large lattice relaxation model in which the DX center can have either a positive or a negative Coulomb energy U. We found that if the symmetry of the DX center depended on its charge state then its DLTS peak was not split by uniaxial stress in contrast to other defects with large lattice relaxation (such as the A center in Si).
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1404-1404 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A discussion is given on the various DX center models in connection wi some recent experiments concerning DX centers in n−AlGaAs under uniaxial stresses. (AIP)
    Type of Medium: Electronic Resource
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