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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3300-3302 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-ordered, strained InGaAs/GaAs quantum structures are grown on V-grooved GaAs substrates. The lateral patterning of these nonplanar heterostructures allows the growth of defect-free strained structures with thickness exceeding that achieved with planar epitaxy. Indium segregation at the bottom of the groove results in the formation of a vertical InGaAs quantum-well structure with In-enriched composition. We studied in detail the influence of nominal thickness and In content on the photoluminescence peak energy of these quantum wires. Room-temperature emission at 1.16 μm with a relatively narrow linewidth (30–35 meV) is achieved as a demonstration of the potential of this approach for fabricating long-wavelength semiconductor light sources on GaAs substrates. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 364-366 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first observation of intersubband transitions in InyGa1−yAs(y=0.3,0.5)/ AlGaAs quantum wells. These quantum wells were grown on a GaAs substrate with a linearly graded InGaAs buffer to achieve strain relaxation before growth of the quantum wells. Measured intersubband transition energies of 316 and 350 meV are among the largest ever reported. Asymmetric step In0.5Ga0.5As/AlGaAs quantum wells designed for second harmonic generation measurements also demonstrate strong intersubband absorption at 224 meV corresponding to the 1-2 transition. With the large conduction band offsets (larger than 800 meV) available in this material system, extension to larger intersubband transitions energies for quantum well photodetector and nonlinear optics applications should be possible.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 246-248 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical switching of a bispectral infrared photoconductor is demonstrated with GaAs/AlGaAs asymmetric step multiquantum wells, presenting bound-to-bound (tunable 8.5–9.0 μm) and bound-to-extended (≈5.5 μm) intersubband transitions of similar oscillator strengths. The bound-to-bound photoresponse is switched on by applying an electric field of sufficient magnitude to permit the collection of the photoexcited bound electrons by tunneling.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3255-3257 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intersubband transitions between a bound state and extended states in GaAs/AlGaAs multiquantum wells are studied by simultaneous absorption and photocurrent spectroscopy under different electric field conditions. It is found that both types of spectra exhibit different line shapes, with the photocurrent maximum occurring at lower photon energy than in absorption spectra. Moreover, there is a blue shift of absorption peak and a red shift of photocurrent peak with increasing electric fields. These results suggest that a sequential mechanism is involved in the photocurrent collection from the quantum well. The blue shift is then well fitted by a quadratic Stark effect and the red shift by a barrier lowering mechanism.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1402-1402 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2334-2336 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the electric field effects in photoluminescence (PL) and PL excitation (PLE) measurements of reverse-biased GaAs V-groove quantum wires. We observe large redshifts (9 meV at −65 kV/cm) of PL and PLE peaks as well as field dependent intensity and polarization anisotropy variations, which are analyzed by a two-dimensional quantum confined Stark effect model. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 701-703 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure and low temperature luminescence properties of compressively strained InGaAs/AlGaAs quantum wire (QWR) arrays grown by low-pressure organometallic chemical vapor deposition on V-grooved substrates are reported. The strain gives rise to quasi-periodic undulations of the wire facets along the wire axis, resulting in ordered chains of quantum dotlike structures. Low-temperature photoluminescence shows efficient emission from the wires with narrow (as low as 9.8 meV) linewidths and relatively high intensities. At high excitation densities, several quasi-one-dimensional QWR subbands appear as a result of bandfilling, presenting virtually no energy shifts (〈2 meV), even when several (≥3) subbands are filled. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2630-2632 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report short wavelength second-harmonic generation (SHG) spectroscopy of asymmetric coupled In0.6Ga0.4As/AlAs quantum wells (QWs). The QW is designed to show maximum second-order nonlinear susceptibility χ(2) for SHG of 4 and 2 μm wavelengths by single and double resonance effects, respectively. SHG spectroscopy across the midinfrared is measured using both a CO2 and a free electron laser as pumps. The χ(2) of the QW is extracted from interference of the second-harmonic fields from the QW and GaAs substrate, determined by the azimuthal dependence of the SHG power. We measure χ(2) of the QW for harmonic wavelengths between 5.36 and 1.85 μm. This is the shortest wavelength SHG to date by any QW intersubband interaction. Good agreement of experiment with theory for the dispersion of χ(2) for both singly and doubly resonant conversion is observed throughout the midinfrared. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2589-2591 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For the first time, resonant parallel photoconductivity due to intraband optical transitions is observed in GaAs/AlGaAs multiquantum wells. The angle of incidence dependence of the detected signals indicates that the photoconductivity process is not directly related to intersubband transitions. Indeed, contrary to usual detectors based on intersubband transitions, infrared radiations are detected at normal incidence with responsivity as high as (0.05 A/W). Photoconductivity spectra reproduce roughly the absorption spectra with, however, significant differences in peak positions, indicating that the intersubband transitions are indirectly involved in the detection process. Elements of an explanatory model based on hot-electron bolometric effects are discussed.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2959-2961 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed selective carrier injection into GaAs/AlGaAs V-groove quantum wires (QWRs) via self-ordered vertical quantum wells (VQWs). Room-temperature I–V characteristics of QWR diodes show a turn-on voltage lower by 0.2 V as compared with planar QW diodes, consistent with the band-gap reduction of 0.2 eV at the vertical QW. This selective injection results in narrow linewidth electroluminescence (∼5 nm at 300 K) emanating exclusively from the QWR from 10 K up to 300 K. © 1998 American Institute of Physics.
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