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  • 1
    American Institute of Physics (AIP)
    Publication Date: 2016-11-09
    Description: Time domain electric pulse measurements were conducted on a capacitor consisting of a Pt film as the top electrode, atomic-layer-deposited 6.5-nm-thick amorphous Al 2 O 3 as the dielectric layer, and two-dimensional electron gas (2DEG) at the interface between Al 2 O 3 and SrTiO 3 as the bottom electrode. The sample showed highly useful current-voltage characteristics as the selector in cross-bar array resistance switching random access memory. The long-term (order of second) variation in the leakage current when the Pt electrode was positively biased was attributed to the field-induced migration of oxygen vacancies between the interior of the Al 2 O 3 and the 2DEG region. Relaxation of the vacancy concentration occurred even at room temperature.
    Electronic ISSN: 2166-532X
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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