Polymer and Materials
Wiley InterScience Backfile Collection 1832-2000
The growth of Pd layers on polycrystalline Cu substrate at 176 K and 300 K was studied in an Auger system with facilities for photoelectric work function (WF) measurements and automated data acquisition. The LVV and MVV Auger transitions of Cu, as well as the corresponding MVV and NVV of Pd, were monitored in relation to Pd overlayer thickness, annealing temperature and sputtering time. The ‘local’ WF change, determined through the secondaries' cut-off shift, and the absolute photoelectric WF were also monitored.The initially linear increase in the Pd atom fraction, with only one break during deposition at 300 K, suggests a Stranski-Krastanov film growth mechanism. The simultaneously monitored Auger M23M45M45 Cu doublet at 59-61 eV changes from the very beginning of the Pd deposition into one broadened peak at 61 eV, possibly owing to a roughness effect. With sputtering, the slope of the Pd concentration at the interface decreases when the temperature of deposition and sputtering increases from 176 K to 300 K, indicating diffusion of Pd even at 300 K. By sputtering with Ar+ ions of 5 keV, a depth resolution of ∼3.2 nm was found. Annealing at T 〉 473 K causes a rapid diffusion of Pd atoms into the Cu substrate.The ‘local’ WF is affected dramatically by Pd deposition and sputtering, while the average photoelectric WF is not as sensitive.
Type of Medium: