Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment
American Institute of Physics (AIP)
The influence of growth temperature on the surface morphology and luminescence properties of Eu-doped GaN layers grown by organometallic vapor phase epitaxy was investigated. By using a Eu source that does not contain oxygen in its molecular structure, and varying the growth temperature, the local defect environment around the Eu 3+ ions was manipulated, yielding a higher emission intensity from the Eu 3+ ions and a smoother sample surface. The optimal growth temperature was determined to be 960 °C and was used to fabricate a GaN-based red light-emitting diode with a significantly higher output power.
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics